 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| e PTB 20216 6 Watts, 1.8-2.0 GHz RF Power Transistor Description The 20216 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency band. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 6 Watts, 1.80-2.00 GHz Class AB Characteristics 30% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power 7 Output Power (Watts) VCC = 26 V 6 5 4 3 2 0.0 0.2 0.4 0.6 0.8 ICQ = 50 mA f = 1.8 - 2.0 GHz 202 16 LO TC OD E Input Power (Watts) Package 20227 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCES VEBO IC PD Value 50 50 4.0 1.0 19.7 0.112 -40 to +150 8.9 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20216 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IC = 10 mA, IB = 0 A VBE = 0 V, IC = 10 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 50 mA Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 20 50 4.0 20 Typ -- -- 5.0 40 Max -- -- -- -- Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA, f = 2.0 GHz) Gain (VCC = 26 Vdc, Pout = 6 W, ICQ = 50 mA, f = 2.0 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA, f = 2.0 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA, f = 2.0 GHz--all phase angles at frequency of test) Symbol Gpe Gpe Min 8.0 7.0 30 -- Typ 10 9.0 -- -- Max -- -- -- 5:1 Units dB dB % -- C Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA) Z Source Z Load Z0 = 50 Frequency GHz 1.90 1.95 2.00 R Z Source jX -7.50 -6.16 -3.55 R 11.49 7.23 4.41 Z Load jX -10.15 -6.29 -1.34 14.49 12.30 10.00 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20216 Uen Rev. C 09-28-98 2 5/19/98 |
Price & Availability of PTB20216
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |